Test Structures and Methods

ABSTRACT

Test structures and methods for semiconductor devices, lithography systems, and lithography processes are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes using a lithography system to expose a layer of photosensitive material of a workpiece to energy through a lithography mask, the lithography mask including a plurality of first test patterns having a first phase shift and at least one plurality of second test patterns having at least one second phase shift. The layer of photosensitive material of the workpiece is developed, and features formed on the layer of photosensitive material from the plurality of first test patterns and the at least one plurality of second test patterns are measured to determine a optimal focus level or optimal dose of the lithography system for exposing the layer of photosensitive material of the workpiece.

TECHNICAL FIELD

The present invention relates generally to the fabrication ofsemiconductor devices, and more particularly to test structures andmethods for semiconductor devices, lithography systems, and lithographyprocesses.

BACKGROUND

Semiconductor devices are used in a variety of electronic applications,such as personal computers, cell phones, digital cameras, and otherelectronic equipment, as examples. Semiconductor devices are typicallyfabricated by sequentially depositing insulating or dielectric layers,conductive layers, and semiconductive layers of material over asemiconductor substrate, and patterning the various material layersusing lithography to form circuit components and elements thereon,forming an integrated circuit.

One type of semiconductor lithography involves positioning a patternedmask between a semiconductor workpiece and an energy source to exposeportions of a photosensitive material deposited on the workpiece,transferring the mask pattern to the photosensitive material. Thephotosensitive material is then developed and used as a mask whileexposed regions of a material on the workpiece are etched away. Thephotosensitive material is removed, and additional material layers aredeposited and patterned in a similar fashion. There may be a dozen ormore lithography mask levels required to manufacture an integratedcircuit, for example.

Scanners are used in semiconductor device manufacturing to expose layersof photosensitive material. A portion, e.g., an exposure field, of asemiconductor workpiece is typically exposed at a time, and the scannersteps from one portion of the workpiece to the next, repeating theprocess until the entire workpiece is exposed.

As semiconductor devices are scaled down or reduced in size, lithographyof semiconductor devices becomes more difficult. There are manyparameters in a lithography system or process that may vary or shift,such as a focus level or exposure dose. The variations or shifts inthese parameters may result in the formation of features on materiallayers of semiconductor devices that have undesired or unpredictabledimensions. Thus, it is desirable to detect variations of parameterssuch as focus level and dose in lithography systems or processes.

Therefore, what are needed in the art are improved methods andstructures for testing lithography processes and systems, and teststructures and methods for manufacturing semiconductor devices.

SUMMARY OF THE INVENTION

These and other problems are generally solved or circumvented, andtechnical advantages are generally achieved, by preferred embodiments ofthe present invention, which provide novel testing methods andstructures for semiconductor devices.

In accordance with an embodiment of the present invention, a method ofmanufacturing a semiconductor device includes providing a workpiecehaving a layer of photosensitive material formed thereon. A lithographysystem is used to expose a layer of photosensitive material of aworkpiece to energy through a lithography mask. The lithography maskincludes a plurality of first test patterns having a first phase shiftand at least one plurality of second test patterns having at least onesecond phase shift. The layer of photosensitive material of theworkpiece is developed, and features formed on the layer ofphotosensitive material of the workpiece from the plurality of firsttest patterns and the at least one plurality of second test patterns aremeasured. An optimal focus level or an optimal dose of the lithographysystem for exposing the layer of photosensitive material of theworkpiece is determined from the measurements of the features.

The foregoing has outlined rather broadly the features and technicaladvantages of embodiments of the present invention in order that thedetailed description of the invention that follows may be betterunderstood. Additional features and advantages of embodiments of theinvention will be described hereinafter, which form the subject of theclaims of the invention. It should be appreciated by those skilled inthe art that the conception and specific embodiments disclosed may bereadily utilized as a basis for modifying or designing other structuresor processes for carrying out the same purposes of the presentinvention. It should also be realized by those skilled in the art thatsuch equivalent constructions do not depart from the spirit and scope ofthe invention as set forth in the appended claims.

BRIEF DESCRIPTION OF THE DRAWINGS

For a more complete understanding of the present invention, and theadvantages thereof, reference is now made to the following descriptionstaken in conjunction with the accompanying drawings, in which:

FIG. 1 is a graph illustrating an effect of phase error on best focusshift;

FIG. 2 is a plot of simulation results illustrating a shift in bestfocus versus background phase;

FIG. 3 shows a top view of a semiconductor wafer comprising a pluralityof exposure fields in accordance with an embodiment of the presentinvention;

FIG. 4 is a more detailed top view of an exposure field on the wafershown in FIG. 3;

FIG. 5 shows a more detailed top view of a region of the exposure fieldof a semiconductor device shown in FIG. 4, illustrating a test structurecomprising features that may be formed in each region of the exposurefields in accordance with embodiments of the present invention;

FIG. 6 shows a cross-sectional view of the exposure field of thesemiconductor device shown in FIG. 5;

FIG. 7 shows a top view of a lithography mask comprising a substrate andan attenuating phase shifting material that may be used to pattern theexposure field shown in FIG. 4;

FIG. 8 shows a more detailed top view of a region 144 of the lithographymask 140 of FIG. 7;

FIG. 9 illustrates a cross-sectional view of an embodiment of thepresent invention wherein the thickness of the attenuated phase shiftingmaterial is varied in different regions of the mask to create differentphase shifts;

FIG. 10 illustrates a cross-sectional view of an embodiment of thepresent invention wherein the thickness of the substrate is varied indifferent regions of the mask to create different phase shifts;

FIG. 11 shows a Bossung plot which illustrates effects of exposure doseand focus shifts; and

FIG. 12 shows a flow chart illustrating methods of manufacturingsemiconductor devices in accordance with embodiments with the presentinvention.

Corresponding numerals and symbols in the different figures generallyrefer to corresponding parts unless otherwise indicated. The figures aredrawn to clearly illustrate the relevant aspects of the preferredembodiments and are not necessarily drawn to scale.

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

The making and using of the presently preferred embodiments arediscussed in detail below. It should be appreciated, however, that thepresent invention provides many applicable inventive concepts that canbe embodied in a wide variety of specific contexts. The specificembodiments discussed are merely illustrative of specific ways to makeand use the invention, and do not limit the scope of the invention.

Shrinking design rules in semiconductor devices require the use ofhigher numerical aperture lithography imaging systems, reducing thefocus budget of lithography systems and processes considerably. In 45 nmand 32 nm minimum feature size technologies, for example, a focus budgetof 0.15 μm has been proposed for various critical layers.

However, focus control of tools such as lithography systems and steppersis a challenge in the manufacturing environment of semiconductordevices. Conventional methods of determining focus include inlineoverlay measurement using grating patterns and scatterometrymeasurements. However, these methods require thorough characterizationof the particular structures with reference to the particularphotoresist process and photoresist stacks used. Thus, improved methodsof determining focus levels of lithography systems and processes areneeded in the art.

The present invention will be described with respect to preferredembodiments in a specific context, namely, in focus and dose detection,analysis, and feedback for lithography systems and processes ofintegrated circuits. Embodiments of the invention may also be applied,however, to other applications that would benefit from focus and dosedetection and analysis, for example.

Embodiments of the present invention provide novel focus detectionmethods for lithography of material layers of semiconductor devicesusing attenuated phase shifting masks. The methods are adapted to detectfocus deviations on semiconductor devices by measuring criticaldimensions (CD) on novel test patterns, to be described further herein.

With reference now to FIG. 1, there is shown a graph illustrating theeffect of phase error on best focus shift. The phase error in degrees isshown on the x axis, and the focus shift in nm is shown on the y axis,for measurements made of a 100 nm contact hole at 110 and of a 120 nmcontact hole at 112. A phase variation on a lithography mask leads to achange in a best focus. For example, a change in phase by 10 degreesresults in a change in the best focus by about 50 nm or greater,depending on the contact hole size, which can be seen by the graph inFIG. 1. The best focus variation slope vs. phase change is inverselyproportional to the size of a contact hole.

The unintended effect of focus difference created by the phase ofattenuated phase shifting material on a lithography mask illustrated inthe graph of FIG. 1 is intentionally used in accordance with embodimentsof the present invention to detect focus deviations, which may then befed back in a process control system or may be used to make decisions onwafer lot disposition, to be described further herein.

FIG. 2 is a plot of simulation results illustrating a shift in bestfocus versus background phase for 100 nm contact holes. Focus is shownin μm on the x axis, and background phase is shown in degrees on the yaxis. The focus is plotted over a range of background phases with thebest focus being shown in a central region of the plots of focus foreach background phase. For example, the best focus is shown at 114 a fora background phase of 192 degrees, the best focus is shown at 114 b fora background phase of 180 degrees, and the best focus is shown at 114 cfor a background phase of 168 degrees. The focus for the backgroundphases to the left and right of the best focus 114 a, 114 b, and 114 cpoints on the plot becomes worse at points farther away from the bestfocus 114 a, 114 b, and 114 c points, for example.

The unintended effect of a shift in best focus due to phase variationsof attenuated phase shifting material on a lithography mask illustratedin the plot of FIG. 2 is intentionally used in accordance withembodiments of the present invention to detect focus and dose deviationsand optimizations for a particular lithography system and process, whichmay be fed back in a process control system or may be used to makedecisions on lot disposition, also to be described further herein.

In embodiments of the present invention, two or more test patternshaving varying phase backgrounds are used to deduce focus deviationinformation from test features formed on a layer of photosensitivematerial of a semiconductor device using the test features. The testpatterns comprise patterns for arrays of vias that have different phaseshifts. The test patterns formed from the patterns for the arrays ofvias are measured, and the test patterns comprise a particular criticaldimension (CD) value that is a function of the focus setting. Themeasured CD values of the test patterns may be compared to each otherand to a default or predetermined value to obtain focus informationabout a lithography system or process in accordance with embodiments ofthe present invention.

FIG. 3 shows a top view of a semiconductor wafer 120 comprising aplurality of exposure fields 122 in accordance with an embodiment of thepresent invention. The wafer 120 is generally round in a top view, andmay include alignment features such as notches or straight edges, notshown. The exposure fields 122 across the surface of the wafer 120 maybe square or rectangular, for example. The exposure fields 122 maycomprise a pattern for a single die or integrated circuit, oralternatively, each exposure field 122 may comprise a pattern forseveral die or integrated circuits.

Each exposure field 122 comprises a region that is exposed in a singlestepping process of a stepper, for example. The support for the wafer120 in a lithography system (not shown) may be moved to position eachexposure field 122 of the wafer 120 in order to transfer a pattern froma lithography mask (such as lithography mask 140 shown in FIG. 7) usingenergy through the mask 140 and a lens system of the lithography systemonto a layer of photoresist (such as layer of photosensitive material136 shown in FIGS. 5 and 6) on the wafer 120.

The wafer 120 is moved by the wafer support beneath the lens system fromone exposure field 122 to another exposure field 122, moving through therows and columns of the exposure fields 122 of the wafer 120 andexposing the exposure fields 122 until the entire wafer 120 ispatterned, e.g., in an exposure process for production semiconductordevices, wherein the test features are formed on productionsemiconductor wafers 120. Alternatively, the test features ofembodiments of the present invention may be formed on test wafers 120,wherein the test features may be formed only in some exposure fields 122of the wafer 120, for example.

FIG. 4 is a more detailed top view of an exposure field 122 on the wafer120 shown in FIG. 3. A top view of regions 124 that test patterns areformed in on a semiconductor device in the exposure field 122 inaccordance with an embodiment of the present invention is shown. Testpatterns may be formed in five regions 124 of an exposure field 122 inaccordance with some embodiments of the present invention, as shown. Theregions 124 comprising the test patterns are preferably located at thefour corner regions and at the center region of the exposure field 122.The other regions 126 of the exposure field 122 may comprise areas whereactive or functioning circuitry of the semiconductor device is formed,for example. Regions 126 may comprise features for the active orfunctioning circuitry of a production semiconductor device, oralternatively, regions 126 may be unused, if the test features areformed in regions 124 on a test wafer 120.

FIG. 5 shows a more detailed top view of a region 124 shown in FIG. 4,illustrating a test structure 130 comprising features 132 a, 132 b, and132 c that may be formed in each region 124 of the exposure field 122shown in FIG. 4 in accordance with embodiments of the present invention.

To form the test structure 130, a workpiece 134 is provided, as shown inthe cross-sectional view of FIG. 6. The workpiece 134 may include asemiconductor substrate comprising silicon or other semiconductormaterials covered by an insulating layer, for example. The workpiece 134may also include other active components or circuits, not shown. Theworkpiece 134 may comprise a material layer to patterned disposedthereon, also not shown.

The workpiece 134 may comprise silicon oxide over single-crystalsilicon, for example. The workpiece 134 may include other conductivelayers or other semiconductor elements, e.g., transistors, diodes, etc.Compound semiconductors, GaAs, InP, Si/Ge, or SiC, as examples, may beused in place of silicon. The workpiece 134 may comprise asilicon-on-insulator (SOI) substrate. The workpiece 134 may comprise atest workpiece or a production workpiece, for example. The workpiece 134may comprise a portion of a semiconductor wafer such as wafer 120 shownin FIG. 3.

Next, a layer of photosensitive material 136 is formed on the workpiece134. The layer of photosensitive material 136 may comprise a photoresistsuch as a negative or positive photoresist, for example. An optionalanti-reflective coating may be formed on the workpiece 134 before thelayer of photosensitive material 136 is deposited, not shown.

The layer of photosensitive material 136 is patterned by providing alithography mask such as mask 140 shown in FIGS. 7 through 10, to bedescribed further herein. A lithography system is used to expose thelayer of photosensitive material 136 over the workpiece 134 to energy(e.g., such as light or energy) through the lithography mask 140, andthe layer of photosensitive material is developed to form a teststructure 130 comprising features 132 a, 132 b, and 132 c shown in FIGS.5 and 6.

The features 132 a, 132 b, and 132 c are also referred to herein as testfeatures. The test features 132 a, 132 b, and 132 c comprise a pluralityof vias formed in the layer of photosensitive material 136. The testfeature 132 a is also referred to herein as a plurality of first testvias 132 a, and the test feature 132 b is also referred to herein as aplurality second test vias 132 b. The test feature 132 c is alsoreferred to herein as a plurality of third test vias 132 c.

In some embodiments, the test structure 130 only comprises two testfeatures 132 a, 132 b, or 132 c, for example. In other embodiments, thetest structure 130 may comprise four or more test features 132 a, 132 b,or 132 c, not shown. The test features 132 a, 132 b, and 132 c may beformed proximate one another, as shown.

Each via of the test features 132 a, 132 b, and 132 c comprises anaperture or hole formed in the layer of photosensitive material 136. Thelayer of photosensitive material 136 is disposed over the semiconductorworkpiece 134 which may comprise a portion of a wafer 120 such as theone shown in FIG. 3, for example. The top surface of the workpiece 134is visible from the top surface of the region 124 of the exposure field122 within the vias of the test features 132 a, 132 b, and 132 c, asshown.

In some embodiments, the plurality of first test vias 132 a, theplurality of second test vias 132 b, and the plurality of third testvias 132 c of the test structure 130 each may comprise an array of threerows and columns of vias formed in the layer of photosensitive material136, as shown in FIGS. 5 and 6. Alternatively, the test features 132 a,132 b, and 132 c of the test structure 130 may comprise other numbers ofvias arranged in other sizes of arrays, e.g., comprising other numbersof columns and rows, not shown.

In some embodiments, the vias may comprise a minimum feature size or CDof a lithography system or process used to pattern the test features 132a, 132 b, and 132 c. Alternatively, the vias of the test features 132 a,132 b, and 132 c may comprise dimensions larger than a minimum featuresize, for example. When measured, test features 132 a may comprise adimension d₁, test features 132 b may comprise a dimension d₂, and testfeatures 132 c may comprise a dimension d₃. Although patterns on thelithography mask 140 may comprise the same dimension in all regions ofthe lithography mask 140, the dimensions d₁, d₂, and d₃ may vary for thetest features 132 a, 132 b, and 132 due to focus or dose shifts, forexample, which information may be used to determine information aboutpossible focus or dose shifts of a lithography system or process inaccordance with embodiments of the present invention.

Advantageously, an optimal focus level or an optimal dose of thelithography system or process used to pattern the test structure 130 maybe determined from the test structure 130. For example, the optimalfocus level or dose is determinable by measuring the plurality of firsttest vias 132 a, the plurality of second test vias 132 b, and theplurality of third test vias 132 c, and comparing the measurements ofthe plurality of first test vias 132 a, the plurality of second testvias 132 b, and the plurality of third test vias 132 c. The measurementsof the dimensions d₁, d₂, and d₃ may also be compared to the measureddimensions or width of patterns in the lithography mask 140, forexample.

FIG. 7 shows a top view of a lithography mask 140 that may be used topattern the exposure field 122 shown in FIG. 4. The lithography mask 140includes regions 144 that are used to pattern the regions 124 comprisingthe test structures 130 of the exposure field 122 shown in FIG. 5.Regions 146 of the lithography mask 140 are used to pattern regions 126of the exposure field 122 shown in FIG. 4. The size of the lithographymask 140 corresponds to the size of the exposure field 122 patterned onthe wafer 120. The lithography mask 140 may be larger than the exposurefield 122 depending on the reduction factor of the lens system of thelithography system, for example, e.g., in a 2:1 or 4:1 reduction ratiosystem.

The lithography mask 140 may comprise a dedicated mask for testingsemiconductor devices, for example. Alternatively, the lithography mask140 may comprise patterns for patterning a material layer of aproduction or test semiconductor device, for example.

FIG. 8 shows a more detailed top view of a region 144 of the lithographymask 140 of FIG. 7. FIGS. 9 and 10 show cross-sectional views of region144 of the lithography mask 140 in accordance with embodiments of thepresent invention proximate the test structure pattern 150.

The lithography mask 140 includes a substrate 154 and an attenuatedphase shifting material 156 disposed over the substrate 154. Thesubstrate 154 may comprise a substantially transparent material, such asquartz or glass, and may comprise a thickness of about 500 μm, forexample. Alternatively, the substrate 154 may comprise other dimensions.

The attenuated phase shifting material 156 may comprise a partiallytransmissive material such as MoSi, although other attenuating materialsmay also be used for the attenuated phase shifting material 156. Theattenuated phase shifting material 156 may comprise a thickness of about100 nm, or about 300 nm or less, as examples, although the attenuatedphase shifting material 156 may alternatively comprise other dimensions.

The attenuated phase shifting material 156 comprises a test pattern 150comprising a first test pattern in a first region 152 a and at least onesecond test pattern in at least one second region 152 b or 152 c. Thetest pattern 150 comprises a pattern for the test structure 130 shown inFIG. 5. The first test pattern in the first region 152 a comprises apattern for the plurality of vias 132 a shown in FIG. 5. The at leastone second test pattern in the at least one second region 152 b or 152 ccomprises a pattern for the plurality of vias 132 b and/or 132 c shownin FIG. 5. The patterns for the features in the first region 152 a andthe at least one second region 152 b or 152 c preferably comprise thesame size or dimensions in some embodiments, for example. Alternatively,the patterns for the features in the first region 152 a and the at leastone second region 152 b or 152 c may comprise different sizes anddimensions.

The lithography mask 140 comprises a first phase shift in the firstregion 152 a and at least one second phase shift in the at least onesecond region 152 b or 152 c, such that an optimal focus level or anoptimal dose of a lithography system or process is determinable bymeasuring the test features 132 a, 132 b, and 132 c formed on thephotosensitive material 136 over the workpiece 134 or semiconductordevice using the lithography mask 140. The phase shift in the firstregion 152 a and the at least one second region 152 b or 152 c may beachieved by varying the thickness of the substrate 154, as shown in FIG.10, by varying the thickness of the attenuated phase shifting material156, as shown in FIG. 9, or by varying the thickness of both thesubstrate 154 and the attenuated phase shifting material 156.

Alternatively, the phase shift in the first region 152 a and/or the atleast one second region 152 b or 152 c of the lithography mask may beachieved by modifying the refractive index of the substrate 154 and/orthe attenuated phase shifting material 156 proximate the patterns forthe test features in the first region 152 a and the at least one secondregion 152 b or 152 c. For example, the substrate 154 or the attenuatedphase shifting material 156 of the lithography mask 140 may be implantedwith ions or atoms of a substance, such as potassium, although othersubstances may also be used, to modify the optical characteristics ofthe mask 140 in the desired area. The attenuated phase shifting material156 or the substrate 154, or both the attenuated phase shifting material156 and the substrate 154 may include an implanted substance adapted toproduce the first phase shift or the at least one second phase shift ofthe lithography mask 140, for example.

The phase shifts in regions 152 a, 152 b, or 152 c are intentionallyvaried in accordance with embodiments of the present invention, toproduce the test features 132 a, 132 b, and 132 c such that measuringthe CDs of the test features 132 a, and 132 b, and 132 c provide focusand dose information of the lithography system and processes used topattern the test features 132 a, 132 b, and 132 c. After themanufacturing process for the lithography mask 140, for example,portions of the substrate 154 or attenuating phase shifting material 156may be patterned and etched or implanted with a substance to create thephase shift variations in the various regions of the mask 140.

For example, in FIG. 9, an embodiment of the present invention is shownwherein the thickness of the attenuated phase shifting material 156varies in regions 152 a, 152 b, and 152 c. The thickness of theattenuated phase shifting material 156 in region 152 a may comprise adimension d₄ that is greater than the thickness of the attenuated phaseshifting material 156 in region 152 b comprising dimension d₅. Thethickness of the attenuated phase shifting material 156 in region 152 bmay comprise a dimension d₅ that is greater than the thickness of theattenuated phase shifting material 156 in region 152 c comprisingdimension d₆. The dimensions d₄, d₅, and d₆ may vary by about 50 nm orless, or may vary by about 300 nm or less in some embodiments, forexample, depending on the amount of phase shift desired.

The thicknesses of the attenuated phase shifting material 156 in regions152 a, 152 b, or 152 c may comprise dimensions d₄, d₅, and d₆ such thatan amount of phase shift in the first region is about 180 degrees, andwherein the amount of phase shift in the at least one second region isabout (180 degrees+x) or about (180 degrees−x), wherein x comprises apredetermined amount. The amount of phase shift in regions 152 a, 152 b,or 152 c is also referred to herein as a background phase shift of theregions 152 a, 152 b, or 152 c of the lithography mask 140.

The predetermined amount x of the variation of the phase shifts fromabout 180 degrees may comprise about 1 to 20 degrees, for example. Insome embodiments, for example, the predetermined amount x comprisesabout 10 degrees. For example, in some embodiments, the phase shift inregion 152 b may comprise about 180 degrees, the phase shift in region152 a may comprise about 170 degrees, and the phase shift in region 152c may comprise about 190 degrees.

The first thickness comprising dimension d₄ and the at least one secondthickness (e.g., comprising dimensions d₅ or d₆) of the attenuated phaseshifting material 156 may be determined using Equation 1 in someembodiments:

$\begin{matrix}{{{T/{PS}} = \frac{\lambda}{n*360}};} & {{Eq}.\mspace{14mu} 1}\end{matrix}$

wherein T comprises the first thickness d₄ or the at least one secondthickness d₅ or d₆, wherein PS is the amount of phase shift in the firstregion 152 a or the at least one second region 152 b or 152 c indegrees, wherein λ comprises a wavelength of an exposure process used topattern a photosensitive material of a semiconductor device (e.g., thelayer of photosensitive material 136 shown in FIGS. 5 and 6) using thelithography mask 140, and wherein n comprises a refractive index of theattenuated phase shifting material 156, for example.

In the embodiment shown in FIG. 9, varying the thickness of theattenuated phase shifting material 156 may result in a change in thetransmissivity of the attenuated phase shifting material 156 in someregions 152 a, 152 b, or 152 c. If the transmissivity of the attenuatedphase shifting material 156 is sensitive to the via feature sizeprinted, via size biasing in some regions 152 a, 152 b, or 152 c may beused. For example, the size of the first test pattern or the at leastone second test pattern may be altered to compensate for the alteredtransmissivity, so that the altered transmissivity of the attenuatedphase shifting material 156 does not deleteriously affect the testingprocess for focus and/or dose of the lithography system or process.Thus, in these embodiments, the patterns for the features in the firstregion 152 a and the at least one second region 152 b or 152 c maycomprise different sizes and dimensions, for example.

The phase shifts in regions 152 a, 152 b, and 152 c may also be createdby varying the thickness of the substrate 154. For example, in FIG. 10,an embodiment of the present invention is shown wherein the thickness ofthe substrate 154 of the lithography mask 140 varies in regions 152 a,152 b, and 152 c. The thickness of the substrate 154 in region 152 a maycomprise a dimension d₇ that is greater than the thickness of thesubstrate 154 in region 152 b comprising dimension d₈. The thickness ofthe substrate 154 in region 152 b may comprise a dimension d₈ that isgreater than the thickness of the substrate 154 in region 152 ccomprising dimension d₉. The dimensions d₇, d₈, and d₉ may vary by about100 nm or less, or by about 500 nm or less in some embodiments, forexample, depending on the amount of phase shift desired.

As in the embodiment shown in FIG. 9, the thicknesses of the substrate154 in regions 152 a, 152 b, or 152 c may comprise dimensions d₇, d₈,and d₉ such that an amount of phase shift in the first region is about180 degrees, and wherein the amount of phase shift in the at least onesecond region is about (180 degrees+x) or about (180 degrees−x), whereinx is the predetermined amount.

To test a lithography system or lithography process, a lithographysystem is provided, a workpiece such as workpiece 134 having the layerof photosensitive material 136 formed thereon as shown in FIGS. 5 and 6is provided, and a lithography mask 140 such as the lithography mask 140shown in FIGS. 7 through 10 is provided. A lithography system is alsoprovided that includes the lithography mask 140, a support for theworkpiece 134, an energy source disposed proximate the lithography mask140, and a lens system disposed between the lithography mask 140 and thesupport for the workpiece 134.

Using the lithography system, the layer of photosensitive material 136of the workpiece 134 is exposed to energy through the lithography mask140, and the layer of photosensitive material 136 of the workpiece 134is developed. Features formed on the layer of photosensitive materialfrom the pattern for the plurality of first vias and the pattern for theplurality of the second vias are measured, and an amount of focus levelshift or an amount of dose shift of the lithography system is determinedfrom the measurements made.

For example, FIG. 11 shows a Bossung plot which illustrates effects ofexposure dose and focus shifts. The focus level or value in μm is shownon the x axis and the measured CD is shown on the axis. Measureddimensions of test features 132 b formed by patterns with a phase shiftof 180 degrees are shown at 160, measured dimensions of test features132 a formed by patterns with a phase shift of 190 degrees are shown at164, and measured dimensions of test features 132 c formed by patternswith a phase shift of 170 degrees are shown at 162.

The ideal or intended best focus for the lithography system or processis illustrated at 160 for a phase shift background of 180 degrees. Thebest focus for the graph 160 at 180 degrees is expected to be 78 nm, ascan be seen in the peak of the graph 160 at a focus of 0. However, ifthe focus level shifts to the right, CDs measured in test featuresformed by patterns having a 170 degree phase shift increase, and CDsmeasured in test features formed by patterns having 180 and 190 degreephase shifts decrease. If the focus level shifts to the left, CDsmeasured in test features 132 a, 132 b, and 132 c formed by patternshaving a 190 degree phase shift increase, and CDs measured in testfeatures 132 a, 132 b, and 132 c formed by patterns having 180 and 170degrees decrease. Thus, the magnitude and direction of a focus shift inthe lithography system or process may be determined, based onmeasurements of the novel test features 132 a, 132 b, and 132 cdescribed herein.

If the test features 132 a, 132 b, and 132 c formed in the three arraysof vias shown in FIG. 5 are formed using a mask 140 having three phasebackgrounds of 170, 180, and 190 degrees, respectively, for example,there is a corresponding shift in best focus and the Bossung plot alongthe focus axis. By measuring the CDs of the test features 132 a, 132 b,and 132 c at a set focus level, it is possible to separate the detectionof dose changes from focus changes, and thus the dose/focus deviation isdetected accurately, in accordance with embodiments of the presentinvention.

Embodiments of the present invention provide novel testing methods andstructures that decouple focus shift from dose shift. For example,optimal dose and dose shift of the lithography system or process mayalso be determined using the novel test structures 150 described herein,for example. If the features measured on the layer of photosensitivematerial 136 vary by a similar amount for features formed from theplurality of first test patterns and features formed from the at leastone plurality of second test patterns, then the optimal dose for thelithography system may be determined. After the optimal dose isdetermined, then the optimal dose information determined may be used tomanufacture semiconductor devices 120.

As one example, the layer of photosensitive material 136 may comprise afirst layer of photosensitive material, and exposing the first layer ofphotosensitive material 136 may comprise using a first dose. If theoptimal dose determined is different than the first dose, then the firstlayer of photosensitive material 136 may be removed from the workpiece134, a second layer of photosensitive material may be formed on theworkpiece 134, and using the lithography system, the second layer ofphotosensitive material of the workpiece 134 may be exposed to energythrough the lithography mask at a second dose, the second dose beingsubstantially the same as the optimal dose determined. The second layerof photosensitive material may then be used to pattern a material layerof the semiconductor device 134.

As another example, referring again to the graph shown in FIG. 11, ifthe dose decreases, then all measured CDs of test patterns 132 a, 132 b,and 132 c will decrease. If the dose increases, then all measured CDs ofthe test patterns 132 a, 132 b, and 132 c will increase. Thus, themagnitude and direction of a dose shift in the lithography system orprocess may be determined, based on measurements of the novel testfeatures 132 a, 132 b, and 132 c described herein.

Embodiments of the present invention also include methods ofmanufacturing semiconductor devices. For example, FIG. 12 shows a flowchart 170 illustrating methods of manufacturing semiconductor devicessuch as workpieces 134 in accordance with embodiments of the presentinvention. In step 172, a photosensitive material 136 of a workpiece 134is patterned using a lithography mask 140 described herein. Teststructures 130 formed in the photosensitive material 136 are measured(step 174), and focus shift and/or dose shift of the lithography systemor process is determined (step 176).

The amount of focus shift and/or dose shift determined is compared to athreshold value of the focus shift or dose shift. The threshold value ofthe focus shift or the dose shift may be established based on theparticular lithography system or process, the particular amount ofphotosensitive material 136 being used, the type of semiconductor device120 being manufactured, and other parameters of the lithography process,for example. If the amount of focus or dose shift determined is found tobe acceptable (step 178), then the photosensitive material 136 may beused to pattern the workpiece 134 using the photosensitive material 136(step 182), e.g., if other regions of the photosensitive material 136have been patterned with active or functional circuitry for theworkpiece 134. Alternatively, production semiconductor devices 120 maybe manufactured (step 184, shown in phantom) if an acceptable amount offocus or dose shift is determined (step 178).

When the amount of focus shift and/or dose shift determined is comparedto the threshold value of the focus shift or dose shift, if the amountof focus or dose shift determined is not acceptable (step 178), then thephotosensitive material 136 may be stripped from the workpiece 134 and anew layer of photosensitive material 136 may be deposited on theworkpiece 134 (step 180). A parameter of the lithography system may bealtered, such as the focus or dose, and steps 172, 174, 176, and 178 maybe repeated until an acceptable amount of focus or dose shift is foundin the lithography system or process.

In other embodiments, features 132 a, 132 b, and 132 c of the teststructure 130 formed on the layer of photosensitive material 136 of theworkpiece 134 from the plurality of first test patterns and the at leastone plurality of second test patterns may be measured, and an optimalfocus level or an optimal dose of the lithography system for exposingthe layer of photosensitive material 136 of the workpiece 134 may bedetermined from the measurements of the features 132 a, 132 b, and 132c, for example. Exposing the layer of photosensitive material maycomprise a first focus level, and if the optimal focus level isdetermined to be substantially the same as the first focus level, thelayer of photosensitive material 136 may be used to pattern a materiallayer of the semiconductor device (e.g., the workpiece 134).

Embodiments of the present invention may be used on test workpieces 134in some embodiments. For example, providing the workpiece 134 maycomprise providing a test workpiece 134 having a first layer ofphotosensitive material 136 formed thereon. After the first layer ofphotosensitive material 136 is measured to determine the optimal focuslevel or optimal dose, a second workpiece 134 having a second layer ofphotoresist formed thereon is provided. The second layer of photoresistof the second workpiece 134 is patterned using the lithography system atthe optimal focus level or optimal dose determined using the testworkpiece 134. A plurality of second workpieces 134 may be patterned,e.g., in a production manufacturing run for semiconductor devices.

Other embodiments may be used to test semiconductor devices afterdeveloping the photosensitive material, and the novel testing methodsdescribed herein may be used to screen for unacceptable focus and doseshifts of the lithography system or process. For example, the layer ofphotosensitive material may comprise a first layer of photosensitivematerial, wherein exposing the first layer of photosensitive materialcomprises a first focus level. If the optimal focus level is determinedto be different than the first focus level, a method of manufacturing asemiconductor device may further comprise removing the first layer ofphotosensitive material from the workpiece, forming a second layer ofphotosensitive material on the workpiece, and using the lithographysystem, exposing the second layer of photosensitive material of theworkpiece to energy through the lithography mask at a second focuslevel, wherein the second focus level is substantially the same as theoptimal focus level determined. The second layer of photosensitivematerial may then be used to pattern a material layer of thesemiconductor device.

Advantageously, in-line metrology tools may be used for detecting focusand dose deviations in the methods described herein. Measuring thefeatures 132 a, 132 b, and 132 c formed on the layer of photosensitivematerial 136 may comprise measuring the features 132 a, 132 b, and 132 cusing a scanning electron microscope (SEM) or an optical microscope, forexample, although alternatively, other instruments may be used.

The focus level or dose of the lithography system may be adjusted by theamount of the focus level shift or dose shift determined, in accordancewith embodiments of the present invention. The focus level shift or doseshift may be used to calibrate or service the lithography system orprocess, for example.

The focus and dose deviations that are measurable and detectable usingembodiments of the present invention may be used to make decisions onlot disposition or feedback in a process control system, as examples.

For example, in some embodiments, a method of testing a lithographysystem may include processing a plurality of workpieces comprisingsemiconductor wafers using the lithography system or process. The methodmay comprise periodically measuring features 132 a, 132 b, and 132 cformed on the layer of photosensitive material 136 on the workpieces 134from the pattern for the plurality of first vias and the pattern for theplurality of the second vias, and determining the amount of focus levelshift or the amount of dose shift of the lithography system or processfrom the measurements made. The focus level or dose of the lithographysystem or process may then be altered based on the amount of focus levelshift and amount of dose shift determined.

In some embodiments, e.g., during a manufacturing production run of alot of wafers 120 or at other times, if the amount of the focus levelshift or the amount of dose shift of the lithography system isdetermined to exceed the predetermined level of focus level shift ordose shift, an alarm of the lithography system or process may beactivated, or manufacturing semiconductor wafers using the lithographysystem or process may be discontinued.

Embodiments of the present invention also include test structures 130for semiconductor devices, as shown in FIGS. 5 and 6, and semiconductordevices 120 or 134 including the test structures 130. Embodiments of thepresent invention include lithography masks 140 including the novel testfeatures, and lithography systems including and utilizing thelithography masks 140 described herein. Embodiments of the presentinvention also include methods of fabricating the novel lithographymasks 140 described herein, for example.

Advantages of embodiment of the present invention include methods ofdetecting focus deviation, that may be implement in-line in amanufacturing process flow. The novel methods comprise using CDmeasurement, which provides a large amount of accuracy in themeasurements because of the large degree of accuracy of CD measurementtools. The test structures 130 may be formed in test regions ofsemiconductors, proximate other types of test structures, for example.

The novel test structures and methods decouple focus shifts from doseshifts in a lithography system or process. The test structures andmethods may be implemented in test wafers and masks, or in test regionsof production wafers and masks.

For example, dedicated test masks including the novel test structuresand methods described herein may be implemented on dedicated test wafersused to characterize lithography systems and tools. Or, the novel teststructures and methods may be implemented on small test areas ofproduction masks and wafers.

The novel test structures and methods described herein areadvantageously easily implemented into existing process flows formanufacturing lithography masks and semiconductor devices.

Although embodiments of the present invention and their advantages havebeen described in detail, it should be understood that various changes,substitutions and alterations can be made herein without departing fromthe spirit and scope of the invention as defined by the appended claims.For example, it will be readily understood by those skilled in the artthat many of the features, functions, processes, and materials describedherein may be varied while remaining within the scope of the presentinvention. Moreover, the scope of the present application is notintended to be limited to the particular embodiments of the process,machine, manufacture, composition of matter, means, methods and stepsdescribed in the specification. As one of ordinary skill in the art willreadily appreciate from the disclosure of the present invention,processes, machines, manufacture, compositions of matter, means,methods, or steps, presently existing or later to be developed, thatperform substantially the same function or achieve substantially thesame result as the corresponding embodiments described herein may beutilized according to the present invention. Accordingly, the appendedclaims are intended to include within their scope such processes,machines, manufacture, compositions of matter, means, methods, or steps.

1. A method of manufacturing a semiconductor device, the methodcomprising: providing a workpiece having a layer of photosensitivematerial formed thereon; using a lithography system, exposing the layerof photosensitive material of the workpiece to energy through alithography mask, the lithography mask comprising a plurality of firsttest patterns having a first phase shift and at least one plurality ofsecond test patterns having at least one second phase shift; developingthe layer of photosensitive material of the workpiece; measuringfeatures formed on the layer of photosensitive material of the workpiecefrom the plurality of first test patterns and the at least one pluralityof second test patterns; and determining an optimal focus level or anoptimal dose of the lithography system for exposing the layer ofphotosensitive material of the workpiece from the measurements of thefeatures.
 2. The method according to claim 1, wherein exposing the layerof photosensitive material comprises a first focus level, wherein if theoptimal focus level is determined to be substantially the same as thefirst focus level, further comprising using the layer of photosensitivematerial to pattern a material layer of the semiconductor device.
 3. Themethod according to claim 1, wherein providing the workpiece comprisesproviding a test workpiece having a first layer of photosensitivematerial formed thereon, further comprising providing a workpiece havinga second layer of photoresist formed thereon, and patterning the secondlayer of photoresist using the lithography system at the optimal focuslevel or optimal dose determined.
 4. The method according to claim 1,wherein the layer of photosensitive material comprises a first layer ofphotosensitive material, wherein exposing the first layer ofphotosensitive material comprises a first focus level, wherein if theoptimal focus level is determined to be different than the first focuslevel, further comprising: removing the first layer of photosensitivematerial from the workpiece; forming a second layer of photosensitivematerial on the workpiece; using the lithography system, exposing thesecond layer of photosensitive material of the workpiece to energythrough the lithography mask at a second focus level, the second focuslevel being substantially the same as the optimal focus level; and usingthe second layer of photosensitive material to pattern a material layerof the semiconductor device.
 5. The method according to claim 1, whereinexposing the layer of photosensitive material of the workpiece to energythrough the lithography mask comprises using a lithography maskcomprising a plurality of third test patterns having at least one thirdphase shift, wherein measuring the features formed on the layer ofphotosensitive material further comprises measuring features formed onthe layer of photosensitive material from the plurality of third testpatterns.
 6. The method according to claim 1, wherein if the featuresmeasured on the layer of photosensitive material vary by a similaramount for features formed from the plurality of first test patterns andfeatures formed from the at least one plurality of second test patterns,determining the optimal dose for the lithography system.
 7. The methodaccording to claim 6, wherein the layer of photosensitive materialcomprises a first layer of photosensitive material, wherein exposing thefirst layer of photosensitive material comprises a first dose, andwherein if the optimal dose determined is different than the first dose,the method further comprises: removing the first layer of photosensitivematerial from the workpiece; forming a second layer of photosensitivematerial on the workpiece; using the lithography system, exposing thesecond layer of photosensitive material of the workpiece to energythrough the lithography mask at a second dose, the second dose beingsubstantially the same as the optimal dose determined; and using thesecond layer of photosensitive material to pattern a material layer ofthe semiconductor device.
 8. A test structure for a semiconductordevice, comprising: a plurality of first test vias; a plurality ofsecond test vias proximate the plurality of first test vias; and aplurality of third test vias proximate the plurality of first test viasand the plurality of second test vias, wherein an optimal focus level oran optimal dose of a lithography system or process used to pattern thetest structure is determinable by measuring the plurality of first testvias, the plurality of second test vias, and the plurality of third testvias, and comparing the measurements of the plurality of first testvias, the plurality of second test vias, and the plurality of third testvias.
 9. The test structure according to claim 8, wherein the pluralityof first test vias, the plurality of second test vias, and the pluralityof third test vias are formed in corner regions and a central region ofan exposure field of the semiconductor device.
 10. The test structureaccording to claim 8, wherein the plurality of first vias, the pluralityof second vias, and the plurality of third vias each comprise an arrayof three rows and columns of vias.
 11. A semiconductor device includingthe test structure of claim
 8. 12. A lithography mask, comprising: asubstrate; and an attenuated phase shifting material disposed over thesubstrate, the attenuated phase shifting material comprising a firsttest pattern in a first region and at least one second test pattern inat least one second region, wherein the lithography mask comprises afirst phase shift in the first region and at least one second phaseshift in the at least one second region, wherein an optimal focus levelor an optimal dose of a lithography system or process is determinable bymeasuring test features formed on a photosensitive material of asemiconductor device using the lithography mask.
 13. The lithographymask according to claim 12, wherein the attenuated phase shiftingmaterial or the substrate, or both the attenuated phase shiftingmaterial and the substrate, comprise a first thickness in the firstregion and at least one second thickness in the at least one secondregion, the at least one second thickness being different than the firstthickness, or wherein the attenuated phase shifting material or thesubstrate, or both the attenuated phase shifting material and thesubstrate include an implanted substance adapted to produce the firstphase shift or the at least one second phase shift of the lithographymask.
 14. The lithography mask according to claim 13, wherein the firstthickness or the at least one second thickness of the attenuated phaseshifting material are determinable using Equation 1: $\begin{matrix}{{{T/{PS}} = \frac{\lambda}{n*360}};} & {{Eq}.\mspace{14mu} 1}\end{matrix}$ wherein T comprises the first thickness or the at leastone second thickness, wherein PS is the amount of phase shift in thefirst region or the at least one second region in degrees; wherein λcomprises a wavelength of an exposure process used to pattern aphotosensitive material of a semiconductor device using the lithographymask; and wherein n comprises a refractive index of the attenuated phaseshifting material.
 15. The lithography mask according to claim 12,wherein an amount of phase shift in the first region is about 180degrees, and wherein the amount of phase shift in the at least onesecond region is about (180 degrees+x) or about (180 degrees−x), whereinx comprises a predetermined amount.
 16. The lithography mask accordingto claim 15, wherein the predetermined amount x comprises about 1 to 20degrees.
 17. A lithography system including the lithography mask ofclaim 12, the lithography system comprising: a support for a workpiece;an energy source disposed proximate the lithography mask; and a lenssystem disposed between the lithography mask and the support for theworkpiece.
 18. A method of fabricating the lithography mask of claim 12,the method comprising: providing the substrate, the substrate comprisinga substantially transparent material; forming the attenuated phaseshifting material over the substrate; forming the first test pattern inthe first region and the at least one second test pattern in the atleast one second region in the attenuated phase shifting material; andaltering a thickness of a portion of the substrate or a portion of theattenuated phase shifting material in the first region or the at leastone second region to create the first phase shift or the at least onesecond phase shift.
 19. The method according to claim 18, whereinaltering the thickness of the portion of the attenuated phase shiftingmaterial in the first region or the at least one second region comprisesaltering the transmissivity of the attenuated phase shifting material inthe first region or the at least one second region, further comprisingadjusting the size of the first test pattern or the at least one secondtest pattern to compensate for the altered transmissivity.
 20. A methodof testing a lithography system, the method comprising: providing aworkpiece having a layer of photosensitive material formed thereon;providing a lithography mask comprising an attenuated phase shiftingmaterial comprising a pattern for plurality of first vias in a firstregion and a pattern for a plurality of second vias in at least onesecond region, the first region having a first phase shift and the atleast one second region having at least one second phase shift; usingthe lithography system, exposing the layer of photosensitive material ofthe workpiece to energy through the lithography mask; developing thelayer of photosensitive material of the workpiece; measuring featuresformed on the layer of photosensitive material from the pattern for theplurality of first vias and the pattern for the plurality of the secondvias; and determining an amount of focus level shift or an amount ofdose shift of the lithography system from the measurements made.
 21. Themethod according to claim 20, further comprising adjusting a focus levelor a dose of the lithography system by the amount of focus level shiftor dose shift determined, calibrating the lithography system using theamount of focus level shift or dose shift determined, or servicing thelithography system.
 22. The method according to claim 20, whereinproviding the lithography mask comprises providing a test lithographymask or a production lithography mask including patterns for integratedcircuitry of the workpiece, or wherein providing the workpiece comprisesproviding a test workpiece or a production workpiece.
 23. The methodaccording to claim 20, further comprising processing a plurality ofworkpieces comprising semiconductor wafers using the lithography system,further comprising periodically: measuring features formed on the layerof photosensitive material on the workpieces from the pattern for theplurality of first vias and the pattern for the plurality of the secondvias; determining the amount of focus level shift or the amount of doseshift of the lithography system from the measurements made; and alteringa focus level or dose of the lithography system based on the amount offocus level shift and amount of dose shift determined.
 24. The methodaccording to claim 20, wherein measuring the features formed on thefirst layer of photosensitive material comprises measuring the featuresusing a scanning electron microscope (SEM) or an optical microscope. 25.The method according to claim 20, further comprising: providing apredetermined level of focus level shift or dose shift; manufacturing aplurality of workpieces comprising semiconductor wafers using thelithography system; periodically measuring features formed on the layerof photosensitive material from the pattern for the plurality of firstvias and the pattern for the plurality of the second vias; anddetermining the amount of focus level shift or the amount of dose shiftof the lithography system from the measurements made, wherein if theamount of the focus level shift or the amount of dose shift of thelithography system is determined to exceed the predetermined level offocus level shift or dose shift, further comprising activating an alarmof the lithography system or discontinuing manufacturing thesemiconductor wafers using the lithography system.